IXFX44N50Q
MOSFET N-CH 500V 44A PLUS247-3Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS HiPerFET™, Q Class IXFX44N50Q is an N-Channel Power MOSFET with a Drain-Source Voltage (Vdss) of 500 V. This component offers a continuous drain current (Id) of 44A at 25°C and a maximum power dissipation of 500W. The IXFX44N50Q features a low on-resistance of 120mOhm at 22A and 10V. Key parameters include a gate charge (Qg) of 190 nC and input capacitance (Ciss) of 7000 pF. Designed with a PLUS247™-3 package for through-hole mounting, this MOSFET operates efficiently across a wide temperature range of -55°C to 150°C. The IXFX44N50Q is suitable for high-power switching applications in industries such as industrial power supplies and renewable energy systems.
Additional Information
Series: HiPerFET™, Q ClassRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 Variant |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 44A (Tc) |
| Rds On (Max) @ Id, Vgs | 120mOhm @ 22A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 500W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 4mA |
| Supplier Device Package | PLUS247™-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 190 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7000 pF @ 25 V |
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