IXFX32N50
MOSFET N-CH 500V 32A PLUS247-3Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFX32N50 is a HiPerFET™ N-Channel Power MOSFET designed for high-voltage applications. This component features a drain-source voltage (Vdss) of 500V and a continuous drain current (Id) capability of 32A at 25°C. With a maximum power dissipation of 360W (Tc), it is suitable for demanding power conversion tasks. The device offers a low on-resistance (Rds On) of 150mOhm at 15A and 10V gate drive. Key electrical characteristics include a gate charge (Qg) of 300 nC at 10V and an input capacitance (Ciss) of 5450 pF at 25V. The IXFX32N50 is housed in a through-hole PLUS247™-3 package, facilitating robust board mounting. This MOSFET finds application in power supplies, industrial motor control, and renewable energy systems.
Additional Information
Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 Variant |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 32A (Tc) |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 360W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 4mA |
| Supplier Device Package | PLUS247™-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 300 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5450 pF @ 25 V |
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