IXFX32N100Q3
MOSFET N-CH 1000V 32A PLUS247-3Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFX32N100Q3 is an N-Channel HiPerFET™, Q3 Class power MOSFET designed for high-voltage applications. Featuring a Drain-to-Source Voltage (Vdss) of 1000V and a continuous Drain Current (Id) of 32A at 25°C, this component offers a maximum power dissipation of 1250W at the case temperature. The device exhibits a low on-resistance (Rds On) of 320mOhm at 16A and 10V Vgs. Key parameters include a gate charge (Qg) of 195 nC at 10V and input capacitance (Ciss) of 9940 pF at 25V. Operating across a temperature range of -55°C to 150°C (TJ), it is housed in a PLUS247™-3 package for through-hole mounting. This MOSFET is suitable for applications in power supplies, motor control, and industrial power conversion.
Additional Information
Series: HiPerFET™, Q3 ClassRoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 Variant |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 32A (Tc) |
| Rds On (Max) @ Id, Vgs | 320mOhm @ 16A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1250W (Tc) |
| Vgs(th) (Max) @ Id | 6.5V @ 8mA |
| Supplier Device Package | PLUS247™-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 1000 V |
| Gate Charge (Qg) (Max) @ Vgs | 195 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9940 pF @ 25 V |
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