IXFX30N50Q
MOSFET N-CH 500V 30A PLUS247-3Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS HiPerFET™ IXFX30N50Q is a high-performance N-Channel Power MOSFET designed for demanding applications. This component features a 500V drain-source voltage (Vdss) and a continuous drain current (Id) of 30A at 25°C (Tc), with a maximum power dissipation of 416W (Tc). Key electrical characteristics include a maximum Rds(on) of 160mOhm at 15A and 10V, and a gate charge (Qg) of 150nC at 10V. The input capacitance (Ciss) is 3950pF at 25V. The device operates with a gate-source voltage (Vgs) range of ±20V and a threshold voltage (Vgs(th)) of 4.5V at 4mA, with a recommended drive voltage of 10V for optimal Rds(on). Packaged in a PLUS247™-3 (TO-247-3 Variant) through-hole configuration, it is suitable for industrial power supplies, motor control, and renewable energy systems. It operates across an extended temperature range of -55°C to 150°C (TJ).
Additional Information
Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 Variant |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 160mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 416W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 4mA |
| Supplier Device Package | PLUS247™-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3950 pF @ 25 V |
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