IXFX30N110P
MOSFET N-CH 1100V 30A PLUS247-3Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFX30N110P is an N-Channel Power MOSFET from the HiPerFET™, Polar series, designed for high-voltage applications. This component features a maximum drain-source voltage (Vdss) of 1100 V and a continuous drain current (Id) of 30 A at 25°C. The device offers a low on-state resistance (Rds On) of 360 mOhm at 15 A and 10 V gate drive, with a maximum power dissipation of 960 W (Tc). Key characteristics include a gate charge (Qg) of 235 nC at 10 V and input capacitance (Ciss) of 13600 pF at 25 V. Packaged in a TO-247-3 Variant (PLUS247™-3) for through-hole mounting, it operates within a temperature range of -55°C to 150°C. This MOSFET is suitable for use in industrial power supplies, renewable energy systems, and high-voltage switching applications.
Additional Information
Series: HiPerFET™, PolarRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 Variant |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 360mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 960W (Tc) |
| Vgs(th) (Max) @ Id | 6.5V @ 1mA |
| Supplier Device Package | PLUS247™-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 1100 V |
| Gate Charge (Qg) (Max) @ Vgs | 235 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 13600 pF @ 25 V |
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