IXFX26N60Q
MOSFET N-CH 600V 26A PLUS247-3Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFX26N60Q is a HiPerFET™ N-Channel Power MOSFET designed for high-efficiency applications. This component features a 600 V breakdown voltage and a continuous drain current rating of 26 A at 25°C case temperature, with a maximum power dissipation of 360 W. The device exhibits a low on-resistance of 250 mO at 13 A and 10 V Vgs. Key parameters include an input capacitance (Ciss) of 5100 pF at 25 V and a gate charge (Qg) of 200 nC at 10 V. The IXFX26N60Q is housed in a TO-247-3 Variant (PLUS247™-3) package, facilitating through-hole mounting. Its robust construction and performance characteristics make it suitable for use in power supplies, motor drives, and industrial applications. The operating temperature range is -55°C to 150°C.
Additional Information
Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BoxDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Box |
| Package / Case | TO-247-3 Variant |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 26A (Tc) |
| Rds On (Max) @ Id, Vgs | 250mOhm @ 13A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 360W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 4mA |
| Supplier Device Package | PLUS247™-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 200 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5100 pF @ 25 V |
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