IXFX260N17T
MOSFET N-CH 170V 260A PLUS247-3Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS N-Channel GigaMOS™ MOSFET, part number IXFX260N17T, offers 170V drain-source voltage with a continuous drain current of 260A at 25°C. This device features a low on-resistance of 6.5mOhm maximum at 60A and 10V gate-source voltage, facilitating high-efficiency power switching. The IXFX260N17T is housed in a PLUS247™-3 package, a TO-247-3 variant designed for through-hole mounting, supporting a maximum power dissipation of 1670W at 25°C. Key parameters include a gate charge of 400 nC at 10V and input capacitance of 24000 pF at 25V. It operates within an extended temperature range of -55°C to 175°C. This component is suited for applications in high-power industrial motor drives and renewable energy systems.
Additional Information
Series: GigaMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 Variant |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 260A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.5mOhm @ 60A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1670W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 8mA |
| Supplier Device Package | PLUS247™-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 170 V |
| Gate Charge (Qg) (Max) @ Vgs | 400 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 24000 pF @ 25 V |
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