IXFX25N90
MOSFET N-CH 900V 25A PLUS247-3Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS HiPerFET™ IXFX25N90 is a high-performance N-Channel Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 900V and a continuous drain current (Id) of 25A at 25°C (Tc), with a maximum power dissipation of 560W (Tc). Optimized for efficiency, it offers a low Rds On of 330mOhm at 500mA and 10V, with a gate charge (Qg) of 240 nC at 10V. The device utilizes a through-hole mounting type in a PLUS247™-3 package, suitable for applications requiring robust thermal management. Operating across a temperature range of -55°C to 150°C (TJ), this MOSFET is commonly employed in power supply units, industrial motor control, and high-voltage switching circuits.
Additional Information
Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 Variant |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 25A (Tc) |
| Rds On (Max) @ Id, Vgs | 330mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 560W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 8mA |
| Supplier Device Package | PLUS247™-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 900 V |
| Gate Charge (Qg) (Max) @ Vgs | 240 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 10800 pF @ 25 V |
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