IXFX24N90Q
MOSFET N-CH 900V 24A PLUS247-3Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFX24N90Q is a HiPerFET™, Q Class N-Channel Power MOSFET designed for high-voltage applications. This component features a maximum drain-source voltage (Vdss) of 900 V and a continuous drain current (Id) of 24 A at 25°C (Tc). With a maximum on-resistance (Rds On) of 450 mOhm at 500 mA and 10 V, and a power dissipation capability of 500 W (Tc), it offers efficient switching performance. The device has a gate charge (Qg) of 170 nC at 10 V and an input capacitance (Ciss) of 5900 pF at 25 V. Operating within an extended temperature range of -55°C to 150°C (TJ), the IXFX24N90Q is housed in a through-hole PLUS247™-3 package. This MOSFET is suitable for use in power factor correction, high-voltage power supplies, and industrial motor control applications.
Additional Information
Series: HiPerFET™, Q ClassRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 Variant |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 24A (Tc) |
| Rds On (Max) @ Id, Vgs | 450mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 500W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 4mA |
| Supplier Device Package | PLUS247™-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 900 V |
| Gate Charge (Qg) (Max) @ Vgs | 170 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5900 pF @ 25 V |
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