IXFX24N100Q3
MOSFET N-CH 1000V 24A PLUS247-3Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFX24N100Q3 is a HiPerFET™ Q3 Class N-Channel MOSFET designed for high voltage applications. This electronic component features a Drain-to-Source Voltage (Vdss) of 1000 V and a continuous Drain current (Id) of 24A at 25°C (Tc). The device offers low on-resistance (Rds On) of 440mOhm maximum at 12A, 10V, and a maximum power dissipation of 1000W (Tc). With a gate charge (Qg) of 140 nC maximum at 10V and input capacitance (Ciss) of 7200 pF maximum at 25V, it is suitable for demanding switching applications. The MOSFET utilizes Metal Oxide technology and is housed in a through-hole PLUS247™-3 package. It operates within a temperature range of -55°C to 150°C (TJ) and has a maximum gate-source voltage (Vgs) of ±30V. This component finds application in industries such as power supply, industrial motor control, and high-voltage power conversion.
Additional Information
Series: HiPerFET™, Q3 ClassRoHS Status: ROHS3 CompliantManufacturer Lead Time: 46 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 Variant |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 24A (Tc) |
| Rds On (Max) @ Id, Vgs | 440mOhm @ 12A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1000W (Tc) |
| Vgs(th) (Max) @ Id | 6.5V @ 4mA |
| Supplier Device Package | PLUS247™-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 1000 V |
| Gate Charge (Qg) (Max) @ Vgs | 140 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7200 pF @ 25 V |
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