IXFX24N100F
MOSFET N-CH 1000V 24A PLUS247-3Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS HiPerRF™ N-Channel MOSFET, part number IXFX24N100F, is a high-voltage power transistor designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 1000V and a continuous drain current (Id) of 24A at 25°C (Tc). The device offers a maximum on-resistance (Rds On) of 390mOhm at 12A and 10V. Key parameters include a gate charge (Qg) of 195 nC and input capacitance (Ciss) of 6600 pF. With a maximum power dissipation of 560W (Tc), the IXFX24N100F is suitable for power supply units, industrial motor control, and high-end audio amplifiers. The PLUS247™-3 package facilitates through-hole mounting and operation across an extended temperature range of -55°C to 150°C. The ±20V gate-source voltage (Vgs) limit and 5.5V gate threshold voltage (Vgs(th)) are critical for effective drive circuitry.
Additional Information
Series: HiPerRF™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 24A (Tc) |
| Rds On (Max) @ Id, Vgs | 390mOhm @ 12A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 560W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 8mA |
| Supplier Device Package | PLUS247™-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 1000 V |
| Gate Charge (Qg) (Max) @ Vgs | 195 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6600 pF @ 25 V |
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