IXFX24N100
MOSFET N-CH 1000V 24A PLUS 247Manufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The IXYS HiPerFET™ IXFX24N100 is an N-Channel power MOSFET designed for high-voltage applications. Featuring a Drain-to-Source Voltage (Vdss) of 1000V, this device offers a continuous drain current (Id) of 24A at 25°C and a maximum power dissipation of 560W (Tc). The Rds On (Max) is specified at 390mOhm at 12A and 10V. Key parameters include a Gate Charge (Qg) of 267 nC at 10V and an Input Capacitance (Ciss) of 8700 pF at 25V. This component utilizes MOSFET technology and is housed in a Through Hole PLUS247™-3 package, operating between -55°C and 150°C. It finds application in power supply units, motor control, and industrial automation.
Additional Information
Series: HiPerFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 98 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 Variant |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 24A (Tc) |
| Rds On (Max) @ Id, Vgs | 390mOhm @ 12A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 560W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 8mA |
| Supplier Device Package | PLUS247™-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 1000 V |
| Gate Charge (Qg) (Max) @ Vgs | 267 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8700 pF @ 25 V |
Request a Quote
Clients Also Buy
FMM75-01F
MOSFET 2N-CH 100V 75A I4-PAC
IXFX64N60Q3
MOSFET N-CH 600V 64A PLUS247-3
VMO650-01F
MOSFET N-CH 100V 690A Y3-DCB
