Home

Products

Discrete Semiconductor Products

Transistors

FETs, MOSFETs

Single FETs, MOSFETs

IXFX240N15T2

Banner
productimage

IXFX240N15T2

MOSFET N-CH 150V 240A PLUS247-3

Manufacturer: IXYS

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The IXYS IXFX240N15T2 is a high-performance N-Channel Power MOSFET from the HiPerFET™, TrenchT2™ series. This component features a Drain-to-Source Voltage (Vdss) of 150V and a continuous drain current (Id) of 240A at 25°C. Its low on-resistance (Rds On) is 5.2mOhm at 60A and 10V drive voltage. The device boasts a maximum power dissipation of 1250W at the case temperature and a typical gate charge (Qg) of 460 nC at 10V. Designed for demanding applications, it is packaged in a through-hole PLUS247™-3 configuration. This MOSFET is suitable for use in power conversion and motor control applications within the industrial and automotive sectors. The operating temperature range is -55°C to 175°C (TJ).

Additional Information

Series: HiPerFET™, TrenchT2™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3 Variant
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C240A (Tc)
Rds On (Max) @ Id, Vgs5.2mOhm @ 60A, 10V
FET Feature-
Power Dissipation (Max)1250W (Tc)
Vgs(th) (Max) @ Id5V @ 8mA
Supplier Device PackagePLUS247™-3
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)150 V
Gate Charge (Qg) (Max) @ Vgs460 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds32000 pF @ 25 V

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
FMM150-0075X2F

MOSFET 2N-CH 75V 120A I4-PAC

product image
IXFP110N15T2

MOSFET N-CH 150V 110A TO220AB

product image
IXFT320N10T2

MOSFET N-CH 100V 320A TO268