IXFX210N17T
MOSFET N-CH 170V 210A PLUS247-3Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFX210N17T is an N-Channel GigaMOS™ MOSFET designed for high-power applications requiring robust switching performance. This component features a drain-source voltage (Vdss) of 170 V and a continuous drain current (Id) of 210 A at 25°C (Tc), with a maximum power dissipation of 1150 W (Tc). Its low on-resistance (Rds On) of 7.5 mOhm at 60 A and 10 V gate drive voltage minimizes conduction losses.
Key parameters include a gate charge (Qg) of 285 nC at 10 V and input capacitance (Ciss) of 18800 pF at 25 V. The device operates within a temperature range of -55°C to 175°C (TJ). Packaged in a PLUS247™-3 through-hole configuration, it is suitable for demanding industrial, power supply, and motor control applications. The ±20V maximum gate-source voltage and 5V threshold voltage ensure reliable operation within specified drive conditions.
Additional Information
Series: GigaMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 Variant |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 210A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.5mOhm @ 60A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1150W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 4mA |
| Supplier Device Package | PLUS247™-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 170 V |
| Gate Charge (Qg) (Max) @ Vgs | 285 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 18800 pF @ 25 V |
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