IXFX20N80Q
MOSFET N-CH 800V 20A PLUS247-3Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS HiPerFET™ IXFX20N80Q is an N-Channel Power MOSFET designed for high voltage applications. This component features a Drain-to-Source Voltage (Vdss) of 800V and a continuous drain current (Id) of 20A at 25°C, with a maximum power dissipation of 360W. The Rds On is specified at a maximum of 420mOhm at 10A and 10V gate drive. Key parameters include a gate charge (Qg) of 200 nC at 10V and input capacitance (Ciss) of 5100 pF at 25V. The device operates within a temperature range of -55°C to 150°C. It is housed in a PLUS247™-3 package for through-hole mounting. This MOSFET is suitable for use in power supplies, solar inverters, and motor control applications.
Additional Information
Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 Variant |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 420mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 360W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 4mA |
| Supplier Device Package | PLUS247™-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 200 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5100 pF @ 25 V |
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