IXFX20N120
MOSFET N-CH 1200V 20A PLUS247-3Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS HiPerFET™ IXFX20N120 is an N-Channel Power MOSFET designed for high-voltage applications. This device features a Drain-to-Source Voltage (Vdss) of 1200 V and a continuous Drain Current (Id) of 20 A at 25°C, with a maximum power dissipation of 780 W at the same temperature. The MOSFET exhibits a maximum Rds On of 750 mOhm at 500 mA and 10 V gate drive. Key parameters include a maximum Gate Charge (Qg) of 160 nC at 10 V and an input capacitance (Ciss) of 7400 pF at 25 V. The IXFX20N120 utilizes a standard Metal Oxide technology and is housed in a PLUS247™-3 package, facilitating through-hole mounting. Its operating temperature range is from -55°C to 150°C. This component is suitable for use in power conversion systems, industrial motor drives, and high-voltage power supplies.
Additional Information
Series: HiPerFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 Variant |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 750mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 780W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 8mA |
| Supplier Device Package | PLUS247™-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 160 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7400 pF @ 25 V |
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