IXFX180N10
MOSFET N-CH 100V 180A PLUS247Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS HiPerFET™ IXFX180N10 is an N-Channel Power MOSFET designed for high-current applications. This component features a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 180A at 25°C (Tc), with a maximum power dissipation of 560W (Tc). The low on-resistance (Rds On) of 8mOhm is achieved at 90A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 390 nC at 10V and an input capacitance (Ciss) of 10900 pF at 25V. The IXFX180N10 is housed in a through-hole PLUS247™-3 package, suitable for demanding applications in power conversion, industrial motor control, and electric vehicle powertrains. It operates across a temperature range of -55°C to 150°C (TJ) with a maximum gate-source voltage of ±20V.
Additional Information
Series: HiPerFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 43 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 Variant |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 90A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 560W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 8mA |
| Supplier Device Package | PLUS247™-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 390 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 10900 pF @ 25 V |
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