IXFX180N085
MOSFET N-CH 85V 180A PLUS247-3Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS HiPerFET™ IXFX180N085 is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a drain-source voltage (Vdss) of 85V and a continuous drain current (Id) of 180A at 25°C. Its low on-resistance (Rds On) of 7mOhm at 500mA and 10V drive voltage, coupled with a maximum power dissipation of 560W (Tc), makes it suitable for demanding thermal management. The input capacitance (Ciss) is 9100pF at 25V, with a gate charge (Qg) of 320nC at 10V. Supplied in the TO-247-3 Variant (PLUS247™-3) package for through-hole mounting, this MOSFET operates across a temperature range of -55°C to 150°C (TJ). Industries such as industrial power supplies, electric vehicle charging, and renewable energy systems commonly utilize this device.
Additional Information
Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 Variant |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 560W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 8mA |
| Supplier Device Package | PLUS247™-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 85 V |
| Gate Charge (Qg) (Max) @ Vgs | 320 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9100 pF @ 25 V |
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