IXFX15N100
MOSFET N-CH 1000V 15A PLUS247-3Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS HiPerFET™ IXFX15N100 is an N-Channel power MOSFET designed for high voltage applications. This device features a Drain-to-Source Voltage (Vdss) of 1000V and a continuous Drain Current (Id) of 15A at 25°C (Tc). With a maximum power dissipation of 360W (Tc) and a low on-resistance of 700mOhm at 7.5A and 10V, it offers efficient switching performance. The IXFX15N100 utilizes a through-hole mounting type in a PLUS247™-3 package. Key parameters include a gate charge (Qg) of 220 nC at 10V and input capacitance (Ciss) of 4500 pF at 25V. This component is suitable for use in power supply, industrial motor control, and high-voltage power conversion applications. The operating temperature range is from -55°C to 150°C (TJ).
Additional Information
Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 Variant |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Tc) |
| Rds On (Max) @ Id, Vgs | 700mOhm @ 7.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 360W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 4mA |
| Supplier Device Package | PLUS247™-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 1000 V |
| Gate Charge (Qg) (Max) @ Vgs | 220 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4500 pF @ 25 V |
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