IXFX150N30P3
MOSFET N-CH 300V 150A PLUS247-3Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFX150N30P3 is an N-Channel HiPerFET™, Polar3™ MOSFET designed for high-power switching applications. Featuring a Drain-to-Source Voltage (Vdss) of 300V and a continuous Drain Current (Id) of 150A at 25°C (Tc), this component offers a low on-resistance (Rds On) of 19mOhm at 75A and 10V. The device boasts a maximum power dissipation of 1300W (Tc) and a gate charge (Qg) of 197 nC at 10V. Its through-hole mounting type and PLUS247™-3 package are suitable for demanding thermal management. This MOSFET is commonly utilized in industrial power supplies, motor control, and renewable energy systems. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: HiPerFET™, Polar3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 44 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 Variant |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 150A (Tc) |
| Rds On (Max) @ Id, Vgs | 19mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1300W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 8mA |
| Supplier Device Package | PLUS247™-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 300 V |
| Gate Charge (Qg) (Max) @ Vgs | 197 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 12100 pF @ 25 V |
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