IXFX150N15
MOSFET N-CH 150V 150A PLUS247Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS HiPerFET™ IXFX150N15 is an N-Channel power MOSFET designed for high-performance applications. This component features a drain-source voltage (Vdss) of 150 V and a continuous drain current (Id) of 150 A at 25°C, with a maximum power dissipation of 560W. The low on-resistance (Rds On) of 12.5 mOhm at 75 A and 10 V drive voltage ensures efficient power transfer. Key parameters include a gate charge (Qg) of 360 nC at 10 V and an input capacitance (Ciss) of 9100 pF at 25 V. The IXFX150N15 utilizes TO-247-3 Variant (PLUS247™-3) packaging, suitable for through-hole mounting. This device is commonly employed in industrial power supplies, electric vehicle charging, and renewable energy systems. The operating temperature range is -55°C to 150°C.
Additional Information
Series: HiPerFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 Variant |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 150A (Tc) |
| Rds On (Max) @ Id, Vgs | 12.5mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 560W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 8mA |
| Supplier Device Package | PLUS247™-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 360 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9100 pF @ 25 V |
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