IXFV96N15P
MOSFET N-CH 150V 96A PLUS220Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS PolarHT™ HiPerFET™ IXFV96N15P is a high-performance N-channel Power MOSFET designed for demanding applications. This through-hole component features a drain-source voltage (Vdss) of 150V and a continuous drain current (Id) of 96A at 25°C (Tc), with a maximum power dissipation of 480W (Tc). The Rds(On) is specified at a maximum of 24mOhm at 500mA and 10V gate drive. Key parameters include a gate charge (Qg) of 110 nC at 10V and input capacitance (Ciss) of 3500 pF at 25V. The device operates across a wide temperature range from -55°C to 175°C (TJ) and is housed in a TO-220-3, Short Tab (PLUS220) package. This MOSFET is suitable for use in power conversion, industrial motor control, and high-power switching applications.
Additional Information
Series: PolarHT™ HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BoxDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Box |
| Package / Case | TO-220-3, Short Tab |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 96A (Tc) |
| Rds On (Max) @ Id, Vgs | 24mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 480W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 4mA |
| Supplier Device Package | PLUS220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3500 pF @ 25 V |
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