IXFV52N30P
MOSFET N-CH 300V 52A PLUS220Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFV52N30P is a PolarHT™ HiPerFET™ N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a 300V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) capability of 52A at 25°C (Tc). With a maximum power dissipation of 400W (Tc) and a low on-resistance (Rds On) of 66mOhm at 500mA and 10V, it offers excellent conduction losses. The device exhibits a gate charge (Qg) of 110 nC at 10V and input capacitance (Ciss) of 3490 pF at 25V. Operating over a temperature range of -55°C to 150°C, this through-hole mounted MOSFET is packaged in a TO-220-3, Short Tab (PLUS220). Applications include power supplies, motor control, and high-voltage switching circuits.
Additional Information
Series: PolarHT™ HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3, Short Tab |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 52A (Tc) |
| Rds On (Max) @ Id, Vgs | 66mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 400W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 4mA |
| Supplier Device Package | PLUS220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 300 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3490 pF @ 25 V |
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