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IXFV36N50PS

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IXFV36N50PS

MOSFET N-CH 500V 36A PLUS-220SMD

Manufacturer: IXYS

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The IXYS IXFV36N50PS is an N-Channel HiPerFET™, PolarP2™ Power MOSFET designed for demanding applications. This component offers a 500V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 36A at 25°C (Tc). It achieves a maximum on-resistance (Rds On) of 170mOhm at 500mA and 10V gate-source voltage. Key characteristics include a gate charge (Qg) of 93 nC (max) at 10V and input capacitance (Ciss) of 5500 pF (max) at 25V. With a maximum power dissipation of 540W (Tc), this MOSFET is suitable for surface-mount configurations within the PLUS-220SMD package. It operates reliably across a temperature range of -55°C to 150°C (TJ). This device finds application in power supply units, motor control, and industrial automation.

Additional Information

Series: HiPerFET™, PolarP2™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CasePLUS-220SMD
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C36A (Tc)
Rds On (Max) @ Id, Vgs170mOhm @ 500mA, 10V
FET Feature-
Power Dissipation (Max)540W (Tc)
Vgs(th) (Max) @ Id5V @ 4mA
Supplier Device PackagePLUS-220SMD
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)500 V
Gate Charge (Qg) (Max) @ Vgs93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds5500 pF @ 25 V

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