IXFV36N50P
MOSFET N-CH 500V 36A PLUS220Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFV36N50P is a high-performance N-Channel Power MOSFET from the HiPerFET™ and PolarP2™ series. This component features a drain-to-source voltage rating of 500 V and a continuous drain current capacity of 36 A at 25°C case temperature, with a maximum power dissipation of 540 W (Tc). The IXFV36N50P exhibits a low on-resistance of 170 mOhm maximum at 500 mA and 10 V gate drive. Key characteristics include a gate charge of 93 nC at 10 V and input capacitance of 5500 pF at 25 V. Designed for through-hole mounting in a TO-220-3, Short Tab (PLUS220) package, this device is suitable for applications in power conversion, motor control, and industrial power supplies. It operates across a temperature range of -55°C to 150°C.
Additional Information
Series: HiPerFET™, PolarP2™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3, Short Tab |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 36A (Tc) |
| Rds On (Max) @ Id, Vgs | 170mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 540W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 4mA |
| Supplier Device Package | PLUS220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 93 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5500 pF @ 25 V |
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