IXFV30N60PS
MOSFET N-CH 600V 30A PLUS-220SMDManufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The IXYS IXFV30N60PS is a HiPerFET™, PolarHT™ N-Channel Power MOSFET designed for high-efficiency power switching applications. This component boasts a 600V drain-source voltage (Vdss) and a continuous drain current (Id) of 30A at 25°C (Tc), with a maximum power dissipation of 500W (Tc). The surface mount PLUS-220SMD package facilitates integration into compact designs. Key electrical characteristics include a maximum Rds(on) of 240mOhm at 15A and 10V, and a typical gate charge (Qg) of 82 nC at 10V. With a wide operating temperature range of -55°C to 150°C (TJ), this MOSFET is suitable for demanding environments across industrial, power supply, and motor control sectors.
Additional Information
Series: HiPerFET™, PolarHT™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | PLUS-220SMD |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 240mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 500W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 4mA |
| Supplier Device Package | PLUS-220SMD |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 82 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4000 pF @ 25 V |
Request a Quote
Clients Also Buy
FMM22-05PF
MOSFET 2N-CH 500V 13A I4-PAC
FMM22-06PF
MOSFET 2N-CH 600V 12A I4-PAC
IXFC16N50P
MOSFET N-CH 500V 10A ISOPLUS220
