IXFV30N60P
MOSFET N-CH 600V 30A PLUS220Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFV30N60P is a 600V N-Channel Power MOSFET from the HiPerFET™, PolarHT™ series. This device features a continuous drain current capability of 30A at 25°C (Tc) and a maximum power dissipation of 500W (Tc). Key electrical specifications include a Vds of 600V, a maximum Rds(on) of 240mOhm at 15A and 10V drive, and a gate charge (Qg) of 82 nC at 10V. Input capacitance (Ciss) is rated at 4000 pF at 25V. The component is housed in a TO-220-3, Short Tab (PLUS220) package, designed for through-hole mounting and suitable for operation between -55°C and 150°C (TJ). This MOSFET is commonly utilized in power conversion applications across various industries, including industrial power supplies, motor control, and renewable energy systems.
Additional Information
Series: HiPerFET™, PolarHT™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3, Short Tab |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 240mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 500W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 4mA |
| Supplier Device Package | PLUS220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 82 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4000 pF @ 25 V |
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