IXFV30N50PS
MOSFET N-CH 500V 30A PLUS-220SMDManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFV30N50PS is a HiPerFET™, PolarHT™ series N-Channel Power MOSFET designed for high-efficiency power conversion applications. This device features a 500 V drain-source voltage (Vdss) and a continuous drain current of 30 A at 25°C (Tc). With a low on-resistance of 200 mOhm maximum at 15 A and 10 V (Vgs), it offers minimized conduction losses. The MOSFET is rated for a maximum power dissipation of 460 W (Tc) and utilizes a surface mount PLUS-220SMD package for efficient thermal management. Key parameters include a gate charge (Qg) of 70 nC maximum at 10 V and input capacitance (Ciss) of 4150 pF maximum at 25 V. This component is suitable for use in power supplies, motor control, and high-voltage switching applications across various industrial sectors. It supports a gate-source voltage (Vgs) range of ±30V, with a threshold voltage (Vgs(th)) of 5 V maximum at 4 mA, and operates within a temperature range of -55°C to 150°C (TJ).
Additional Information
Series: HiPerFET™, PolarHT™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | PLUS-220SMD |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 200mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 460W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 4mA |
| Supplier Device Package | PLUS-220SMD |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 70 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4150 pF @ 25 V |
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