IXFV30N50P
MOSFET N-CH 500V 30A PLUS220Manufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The IXYS IXFV30N50P is a HiPerFET™, PolarHT™ series N-Channel Power MOSFET designed for high-voltage applications. This component features a 500V drain-source voltage (Vdss) and a continuous drain current of 30A at 25°C, with a maximum power dissipation of 460W (Tc). The Rds On is specified at a maximum of 200mOhm at 15A and 10V gate drive. Key specifications include a gate charge (Qg) of 70 nC (max) at 10V and input capacitance (Ciss) of 4150 pF (max) at 25V. The IXFV30N50P utilizes through-hole mounting in a TO-220-3, Short Tab (PLUS220) package. This device is suitable for applications in power supplies, motor control, and industrial automation. It operates within a temperature range of -55°C to 150°C (TJ) and has a maximum gate-source voltage of ±30V.
Additional Information
Series: HiPerFET™, PolarHT™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3, Short Tab |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 200mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 460W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 4mA |
| Supplier Device Package | PLUS220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 70 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4150 pF @ 25 V |
Request a Quote
Clients Also Buy
FMM22-05PF
MOSFET 2N-CH 500V 13A I4-PAC
FMM22-06PF
MOSFET 2N-CH 600V 12A I4-PAC
IXFC16N50P
MOSFET N-CH 500V 10A ISOPLUS220
