IXFV26N50PS
MOSFET N-CH 500V 26A PLUS-220SMDManufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The IXYS IXFV26N50PS is a HiPerFET™, PolarHT™ series N-Channel Power MOSFET designed for high-performance applications. This component features a 500 V breakdown voltage (Vdss) and a continuous drain current (Id) of 26 A at 25°C (Tc). With a maximum on-resistance (Rds On) of 230 mOhm at 13 A and 10 V, it delivers efficient power switching. The device boasts a maximum power dissipation of 400 W (Tc) and is housed in a surface mount PLUS-220SMD package. Key parameters include a gate charge (Qg) of 60 nC at 10 V and input capacitance (Ciss) of 3600 pF at 25 V. Operating temperature ranges from -55°C to 150°C (TJ). This MOSFET is suitable for use in power supplies, motor control, and industrial automation.
Additional Information
Series: HiPerFET™, PolarHT™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | PLUS-220SMD |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 26A (Tc) |
| Rds On (Max) @ Id, Vgs | 230mOhm @ 13A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 400W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 4mA |
| Supplier Device Package | PLUS-220SMD |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3600 pF @ 25 V |
Request a Quote
Clients Also Buy
FMM22-05PF
MOSFET 2N-CH 500V 13A I4-PAC
FMM22-06PF
MOSFET 2N-CH 600V 12A I4-PAC
IXFC16N50P
MOSFET N-CH 500V 10A ISOPLUS220
