IXFV26N50P
MOSFET N-CH 500V 26A PLUS220Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFV26N50P is a high-performance N-channel Power MOSFET from the HiPerFET™ and PolarHT™ series. This component offers a 500 V breakdown voltage (Vdss) and a continuous drain current capability of 26 A at 25°C (Tc), with a maximum power dissipation of 400 W (Tc). Featuring a low on-resistance (Rds On) of 230 mOhms at 13 A and 10 V, it is designed for efficient operation. The device has a gate charge (Qg) of 60 nC at 10 V and an input capacitance (Ciss) of 3600 pF at 25 V. Packaged in a TO-220-3, Short Tab (PLUS220) configuration for through-hole mounting, the IXFV26N50P operates across a temperature range of -55°C to 150°C (TJ). Its robust design makes it suitable for applications in power supplies, motor control, and industrial automation.
Additional Information
Series: HiPerFET™, PolarHT™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3, Short Tab |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 26A (Tc) |
| Rds On (Max) @ Id, Vgs | 230mOhm @ 13A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 400W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 4mA |
| Supplier Device Package | PLUS220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3600 pF @ 25 V |
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