IXFV22N60P
MOSFET N-CH 600V 22A PLUS220Manufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The IXYS IXFV22N60P is a HiPerFET™, PolarHT™ N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a maximum drain-source voltage (Vdss) of 600V and a continuous drain current (Id) of 22A at 25°C. The device offers a low on-resistance (Rds On) of 350mOhm at 11A and 10V gate drive, coupled with a maximum power dissipation of 400W (Tc). Key parameters include an input capacitance (Ciss) of 3600pF at 25V and a gate charge (Qg) of 58nC at 10V. The IXFV22N60P is housed in a TO-220-3, Short Tab (PLUS220) package for through-hole mounting, operating across an industrial temperature range of -55°C to 150°C (TJ). This MOSFET is suitable for use in power supply, motor control, and industrial power conversion systems.
Additional Information
Series: HiPerFET™, PolarHT™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3, Short Tab |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 22A (Tc) |
| Rds On (Max) @ Id, Vgs | 350mOhm @ 11A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 400W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 4mA |
| Supplier Device Package | PLUS220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 58 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3600 pF @ 25 V |
Request a Quote
Clients Also Buy
FMM22-05PF
MOSFET 2N-CH 500V 13A I4-PAC
FMM22-06PF
MOSFET 2N-CH 600V 12A I4-PAC
IXFC16N50P
MOSFET N-CH 500V 10A ISOPLUS220
