IXFV22N50P
MOSFET N-CH 500V 22A PLUS220Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFV22N50P is a HiPerFET™, PolarHT™ series N-Channel Power MOSFET designed for high-efficiency power conversion applications. This component features a 500V drain-source voltage (Vdss) and a continuous drain current (Id) of 22A at 25°C, with a maximum power dissipation of 350W. The device offers a low on-resistance (Rds On) of 270mOhm at 11A and 10V gate drive. Key characteristics include a gate charge (Qg) of 50nC and input capacitance (Ciss) of 2630pF. The IXFV22N50P is housed in a TO-220-3, Short Tab (PLUS220) package, suitable for through-hole mounting. This MOSFET is utilized in industries such as power supplies, motor control, and industrial automation.
Additional Information
Series: HiPerFET™, PolarHT™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3, Short Tab |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 22A (Tc) |
| Rds On (Max) @ Id, Vgs | 270mOhm @ 11A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 350W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 2.5mA |
| Supplier Device Package | PLUS220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2630 pF @ 25 V |
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