IXFV20N80PS
MOSFET N-CH 800V 20A PLUS-220SMDManufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
IXYS HiPerFET™, PolarHT™ N-Channel Power MOSFET, part number IXFV20N80PS. This device features a 800 V drain-to-source voltage and a continuous drain current of 20A at 25°C, with a maximum power dissipation of 500W. The Rds On is specified at 520mOhm maximum at 10A, 10V. Key parameters include a gate charge of 86 nC maximum at 10V and input capacitance of 4685 pF maximum at 25V. It is housed in a PLUS-220SMD package for surface mounting and operates across a temperature range of -55°C to 150°C. This component is suitable for applications in power supply, industrial motor control, and renewable energy systems.
Additional Information
Series: HiPerFET™, PolarHT™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | PLUS-220SMD |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 520mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 500W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 4mA |
| Supplier Device Package | PLUS-220SMD |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 86 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4685 pF @ 25 V |
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