IXFV20N80P
MOSFET N-CH 800V 20A PLUS220Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFV20N80P is an N-Channel MOSFET from the HiPerFET™, Polar series, housed in a PLUS220 package. This device features a drain-source voltage (Vdss) of 800V and a continuous drain current (Id) of 20A at 25°C. The maximum power dissipation is rated at 500W (Tc). Key electrical parameters include a maximum on-resistance (Rds On) of 520mOhm at 10A and 10V, and an input capacitance (Ciss) of 4685pF at 25V. The gate charge (Qg) is a maximum of 86nC at 10V. This through-hole component is suitable for high-voltage applications, including power supplies, motor control, and industrial equipment. It operates within an ambient temperature range of -55°C to 150°C (TJ).
Additional Information
Series: HiPerFET™, PolarRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3, Short Tab |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 520mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 500W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 4mA |
| Supplier Device Package | PLUS220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 86 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4685 pF @ 25 V |
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