IXFV18N60PS
MOSFET N-CH 600V 18A PLUS-220SMDManufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS IXFV18N60PS is a HiPerFET™, PolarHT™ N-Channel Power MOSFET designed for high-efficiency switching applications. This device offers a 600V breakdown voltage and a continuous drain current of 18A at 25°C, with a maximum power dissipation of 360W (Tc). The PLUS-220SMD package facilitates surface mounting. Key electrical specifications include a maximum Rds(on) of 400mOhm at 500mA and 10V, a gate charge (Qg) of 50 nC at 10V, and input capacitance (Ciss) of 2500 pF at 25V. The operating temperature range is -55°C to 150°C. This component is suitable for use in power supplies, motor control, and industrial automation.
Additional Information
Series: HiPerFET™, PolarHT™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | PLUS-220SMD |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Rds On (Max) @ Id, Vgs | 400mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 360W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 2.5mA |
| Supplier Device Package | PLUS-220SMD |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2500 pF @ 25 V |
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