IXFV16N80P
MOSFET N-CH 800V 16A PLUS220Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS HiPerFET™, Polar series N-channel power MOSFET, part number IXFV16N80P. This device features an 800 V breakdown voltage and a continuous drain current rating of 16 A at 25°C (Tc). With a maximum power dissipation of 460 W (Tc) and an Rds(on) of 600 mOhm at 500 mA, 10 V, it is designed for high-efficiency switching applications. The IXFV16N80P utilizes advanced MOSFET technology and is packaged in a through-hole TO-220-3, Short Tab (PLUS220) configuration. Key parameters include a gate charge of 71 nC at 10 V and input capacitance of 4600 pF at 25 V. This component is suitable for use in power supply, motor control, and industrial power applications.
Additional Information
Series: HiPerFET™, PolarRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3, Short Tab |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 460W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 4mA |
| Supplier Device Package | PLUS220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 71 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4600 pF @ 25 V |
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