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IXFV15N100PS

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IXFV15N100PS

MOSFET N-CH 1000V 15A PLUS220SMD

Manufacturer: IXYS

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The IXYS IXFV15N100PS is an N-Channel Power MOSFET from the HiPerFET™, PolarP2™ series. This device features a drain-source voltage (Vdss) of 1000V and a continuous drain current (Id) of 15A at 25°C (Tc). The IXFV15N100PS offers a maximum power dissipation of 543W (Tc) and a low Rds On of 760mOhm at 500mA, 10V. It is packaged in a surface mount PLUS-220SMD. Key parameters include a gate charge (Qg) of 97 nC at 10V and an input capacitance (Ciss) of 5140 pF at 25V. This component is suitable for high-voltage switching applications across various industries including power supplies, industrial motor control, and renewable energy systems. The operating temperature range is -55°C to 150°C (TJ).

Additional Information

Series: HiPerFET™, PolarP2™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CasePLUS-220SMD
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C15A (Tc)
Rds On (Max) @ Id, Vgs760mOhm @ 500mA, 10V
FET Feature-
Power Dissipation (Max)543W (Tc)
Vgs(th) (Max) @ Id6.5V @ 1mA
Supplier Device PackagePLUS-220SMD
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)1000 V
Gate Charge (Qg) (Max) @ Vgs97 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds5140 pF @ 25 V

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