IXFV15N100P
MOSFET N-CH 1000V 15A PLUS220Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFV15N100P is an N-Channel Power MOSFET from the HiPerFET™, PolarP2™ series, designed for high-voltage applications. This component features a Drain-Source Voltage (Vdss) of 1000V and a continuous drain current (Id) rating of 15A at 25°C. The device offers a maximum on-resistance (Rds On) of 760mOhm at 500mA and 10V, with a gate charge (Qg) of 97 nC at 10V. Its high power dissipation capability of 543W (Tc) and low input capacitance (Ciss) of 5140 pF at 25V make it suitable for demanding power conversion circuits. The IXFV15N100P is housed in a TO-220-3, Short Tab package, with a PLUS220 supplier device package, enabling through-hole mounting. This device is commonly employed in industrial power supplies, motor control, and renewable energy systems. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: HiPerFET™, PolarP2™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3, Short Tab |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Tc) |
| Rds On (Max) @ Id, Vgs | 760mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 543W (Tc) |
| Vgs(th) (Max) @ Id | 6.5V @ 1mA |
| Supplier Device Package | PLUS220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 1000 V |
| Gate Charge (Qg) (Max) @ Vgs | 97 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5140 pF @ 25 V |
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