IXFV14N80PS
MOSFET N-CH 800V 14A PLUS-220SMDManufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS IXFV14N80PS is an N-Channel HiPerFET™, PolarHT™ series MOSFET designed for high voltage applications. This component features a Drain-Source Voltage (Vdss) of 800V and a continuous drain current (Id) of 14A at 25°C. The device offers a maximum on-resistance (Rds On) of 720mOhm at 500mA and 10V gate drive. With a power dissipation capability of 400W (Tc), it is suitable for demanding power conversion tasks. The surface mount PLUS-220SMD package facilitates efficient thermal management. Key parameters include input capacitance (Ciss) of 3900pF at 25V and gate charge (Qg) of 61nC at 10V. This MOSFET is utilized in power supply, industrial, and renewable energy applications.
Additional Information
Series: HiPerFET™, PolarHT™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | PLUS-220SMD |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Tc) |
| Rds On (Max) @ Id, Vgs | 720mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 400W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 4mA |
| Supplier Device Package | PLUS-220SMD |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 61 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3900 pF @ 25 V |
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