IXFV12N80PS
MOSFET N-CH 800V 12A PLUS-220SMDManufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The IXYS IXFV12N80PS is an N-Channel HiPerFET™, PolarHT™ Power MOSFET designed for high voltage applications. This device features a drain-source voltage (Vdss) of 800V and a continuous drain current (Id) of 12A at 25°C (Tc). With a maximum power dissipation of 360W (Tc), it is suitable for demanding power conversion tasks. The surface mount PLUS-220SMD package allows for efficient thermal management. Key parameters include a low on-resistance (Rds On) of 850mOhm at 500mA and 10V, a gate charge (Qg) of 51 nC at 10V, and an input capacitance (Ciss) of 2800 pF at 25V. This component is utilized in power supplies, lighting, and industrial motor control applications. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: HiPerFET™, PolarHT™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | PLUS-220SMD |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 850mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 360W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 2.5mA |
| Supplier Device Package | PLUS-220SMD |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 51 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2800 pF @ 25 V |
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