IXFV12N80P
MOSFET N-CH 800V 12A PLUS220Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS IXFV12N80P is an 800V N-Channel MOSFET from the HiPerFET™ and PolarHT™ series, housed in a PLUS220 package. This through-hole component offers a continuous drain current of 12A at 25°C (Tc) and a maximum power dissipation of 360W (Tc). Key electrical characteristics include a low on-resistance (Rds On) of 850mOhm at 500mA and 10V, input capacitance (Ciss) of 2800pF at 25V, and gate charge (Qg) of 51nC at 10V. The device operates over a temperature range of -55°C to 150°C. This MOSFET is suitable for high-voltage switching applications in power supplies, motor control, and industrial equipment.
Additional Information
Series: HiPerFET™, PolarHT™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3, Short Tab |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 850mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 360W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 2.5mA |
| Supplier Device Package | PLUS220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 51 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2800 pF @ 25 V |
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