IXFV12N120PS
MOSFET N-CH 1200V 12A PLUS220SMDManufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The IXYS IXFV12N120PS is a HiPerFET™, PolarP2™ series N-Channel Power MOSFET designed for high-voltage, high-power applications. This device features a 1200V drain-source voltage (Vdss) and a continuous drain current (Id) of 12A at 25°C, with a maximum power dissipation of 543W. The Rds(On) is specified at 1.35 Ohm maximum at 500mA and 10V gate drive, with a typical gate charge of 103 nC. With an input capacitance (Ciss) of 5400 pF at 25V, this surface-mount component is housed in a PLUS-220SMD package. It is suitable for use in power conversion and motor drive applications. The operating temperature range is -55°C to 150°C.
Additional Information
Series: HiPerFET™, PolarP2™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | PLUS-220SMD |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.35Ohm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 543W (Tc) |
| Vgs(th) (Max) @ Id | 6.5V @ 1mA |
| Supplier Device Package | PLUS-220SMD |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 103 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5400 pF @ 25 V |
Request a Quote
Clients Also Buy
IXFH42N50P2
MOSFET N-CH 500V 42A TO247AD
IXFX94N50P2
MOSFET N-CH 500V 94A PLUS247-3
IXFV36N50P
MOSFET N-CH 500V 36A PLUS220
