IXFV12N120P
MOSFET N-CH 1200V 12A PLUS220Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS HiPerFET™, PolarP2™ IXFV12N120P is a 1200V N-Channel Power MOSFET designed for high-efficiency switching applications. This device features a continuous drain current rating of 12A at 25°C (Tc) and a maximum power dissipation of 543W (Tc). With a low on-resistance of 1.35 Ohm at 500mA and 10V, and an input capacitance (Ciss) of 5400 pF at 25V, it is suitable for demanding power conversion designs. The IXFV12N120P utilizes MOSFET technology and is housed in a through-hole PLUS220 package, specifically the TO-220-3, Short Tab configuration. This component is commonly employed in industrial power supplies, motor control, and renewable energy systems. It operates reliably across a wide temperature range from -55°C to 150°C (TJ).
Additional Information
Series: HiPerFET™, PolarP2™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3, Short Tab |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.35Ohm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 543W (Tc) |
| Vgs(th) (Max) @ Id | 6.5V @ 1mA |
| Supplier Device Package | PLUS220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 103 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5400 pF @ 25 V |
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