The IXYS IXFV12N100P is a high-performance N-channel Power MOSFET designed for demanding applications. This IXYS MOSFET offers a continuous drain current of 12A and a maximum drain-source voltage of 1000V. Its robust construction and advanced trench gate technology ensure excellent switching characteristics and low on-resistance. The IXFV12N100P is packaged in a standard PLUS220 package, facilitating efficient thermal management and ease of integration into existing designs. This component is widely utilized in industrial power supplies, motor control systems, and high-voltage circuits where reliability and efficiency are paramount. Its robust design makes it suitable for applications requiring high power density and exceptional performance.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk