IXFT80N15Q
MOSFET N-CH 150V 80A TO268Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS HiPerFET™ N-Channel Power MOSFET, part number IXFT80N15Q, offers a 150V drain-source voltage rating and 80A continuous drain current at 25°C (Tc). This TO-268AA packaged device features a maximum on-resistance of 22.5mOhm at 40A and 10V gate-source voltage. With a gate charge (Qg) of 180 nC at 10V and input capacitance (Ciss) of 4500 pF at 25V, it is suitable for high-efficiency power switching applications. The device supports a maximum power dissipation of 360W (Tc) and operates within a temperature range of -55°C to 150°C. This component finds utility in industrial power supplies, motor control, and electric vehicle charging systems.
Additional Information
Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 22.5mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 360W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 4mA |
| Supplier Device Package | TO-268AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 180 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4500 pF @ 25 V |
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