IXFT80N10Q
MOSFET N-CH 100V 80A TO268Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS HiPerFET™ IXFT80N10Q is an N-Channel Power MOSFET designed for high-efficiency power switching applications. Featuring a Drain-to-Source Voltage (Vdss) of 100V, this device offers a continuous drain current (Id) of 80A at 25°C (Tc) and a maximum power dissipation of 360W (Tc). The IXFT80N10Q exhibits a low on-resistance (Rds On) of 15mOhm at 40A and 10V, minimizing conduction losses. Its gate charge (Qg) is 180 nC at 10V, and input capacitance (Ciss) is 4500 pF at 25V. The MOSFET utilizes a TO-268AA surface mount package, ensuring robust thermal performance and ease of assembly in high-power density designs. This component is suitable for use in power supplies, motor control, and other demanding industrial applications. The operating temperature range is -55°C to 150°C.
Additional Information
Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 360W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 4mA |
| Supplier Device Package | TO-268AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 180 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4500 pF @ 25 V |
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