IXFT80N08
MOSFET N-CH 80V 80A TO268Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFT80N08 is a high-performance N-Channel Power MOSFET from the HiPerFET™ series. This device features a drain-source voltage (Vdss) of 80V and a continuous drain current (Id) of 80A at 25°C (Tc). With a low on-resistance (Rds On) of 9mOhm at 40A and 10V gate-source voltage, it offers excellent conduction efficiency. The MOSFET boasts a high power dissipation capability of 300W (Tc) and utilizes a TO-268AA surface mount package for robust thermal management. Key electrical parameters include a gate charge (Qg) of 180 nC at 10V and input capacitance (Ciss) of 4800 pF at 25V. This component is suitable for demanding applications across various industries, including industrial power supplies and motor control. It operates across a wide temperature range of -55°C to 150°C (TJ).
Additional Information
Series: HiPerFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 4mA |
| Supplier Device Package | TO-268AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 180 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4800 pF @ 25 V |
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