IXFT78N60X3HV
MOSFET ULTRA 600V 78A TO268HVManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFT78N60X3HV is an N-Channel HiPerFET™ Ultra X3 series power MOSFET designed for high-performance applications. This component features a Drain-to-Source Voltage (Vdss) of 600V and a continuous drain current (Id) of 78A at 25°C (Tc), with a maximum power dissipation of 780W (Tc). The Ultra X3 technology offers a low on-resistance (Rds On) of 38mOhm at 39A and 10V, complemented by a gate charge (Qg) of 70nC at 10V and input capacitance (Ciss) of 4700pF at 25V.
This MOSFET utilizes a surface mount TO-268HV (IXFT) package, making it suitable for demanding thermal environments. It operates within an ambient temperature range of -55°C to 150°C (TJ) and has a maximum gate-source voltage (Vgs) of ±20V. The IXFT78N60X3HV is commonly deployed in power conversion systems, industrial power supplies, and electric vehicle charging infrastructure.
Additional Information
Series: HiPerFET™, Ultra X3RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 78A (Tc) |
| Rds On (Max) @ Id, Vgs | 38mOhm @ 39A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 780W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 4mA |
| Supplier Device Package | TO-268HV (IXFT) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 70 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4700 pF @ 25 V |
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