IXFT74N20
MOSFET N-CH 200V 74A TO268Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS HiPerFET™ IXFT74N20 is an N-Channel Power MOSFET designed for high-efficiency switching applications. This device features a drain-source voltage (Vdss) of 200V and a continuous drain current (Id) of 74A at 25°C (Tc). With a maximum power dissipation of 360W (Tc), it is well-suited for demanding power conversion tasks. The low on-resistance (Rds On) of 30mOhm is achieved at a drain current of 500mA and gate-source voltage (Vgs) of 10V, with a recommended drive voltage of 10V. Key parameters include a gate charge (Qg) of 280 nC (Max) at 10V and input capacitance (Ciss) of 5400 pF (Max) at 25V. The IXFT74N20 is housed in a TO-268AA surface-mount package, suitable for industrial and power supply applications. It operates across a temperature range of -55°C to 150°C (TJ) and has a maximum gate-source voltage of ±20V.
Additional Information
Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 74A (Tc) |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 360W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 4mA |
| Supplier Device Package | TO-268AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 280 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5400 pF @ 25 V |
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